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RQM2201DNS
Silicon N Channel MOS FET Power Switching
REJ03G1492-0200 Rev.2.00 Apr 16, 2007
Features
* * * * * Small, thin and leadless type package (3 x 3 mm, t = 0.8 mm max.) Two FET chips are mounted in one package High density mounting High speed switching. (Ciss = 200 pF typ) VDSS 60 V and capable of 2.5 V gate drive
Outline
RENESAS Package code: PWSN0006ZA-A
(Package name: WSON0303-6 )
FET No.1 (Nch) 6 D FET No.2 (Nch) 5 D 4 G
5
6
2 G
1
4
4
32
1
(Bottom view)
S 1 S 3
1, 3: Source 2, 4: Gate 5, 6: Drain
Notes:
1. Marking is "M2201". 2. The following maximum ratings and electric characteristics are applied to both FET1 and FET2.
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body - drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse) Note1 IDR Pch Note2 Pch Note3 Tch Tstg Ratings 60 12 2 8 2 1 1.5 150 -55 to +150 Unit V V A A A W W C C
Notes: 1. PW 10 s, Duty cycle 1% 2. 1 Drive operation: When using the glass epoxy board (FR-4 40 x 40 x 1 mm) 3. 2 Drive operation: When using the glass epoxy board (FR-4 40 x 40 x 1 mm)
REJ03G1492-0200 Rev.2.00 Apr 16, 2007 Page 1 of 7
RQM2201DNS
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Gate to source leak current Drain to source leak current Gate to source cutoff voltage Drain to source on state resistance Drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn - on delay time Rise time Turn - off delay time Fall time Total gate charge Gate to Source charge Gate to drain charge Body - drain diode forward voltage Notes: 4. Pulse test Symbol V(BR)DSS V(BR)GSS V(BR)GSS IGSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF Min 60 +12 -12 -- -- -- 0.4 -- -- 2.3 -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- -- -- 173 207 3.5 200 25 13 7 28 30 4 2.4 0.4 0.4 0.8 Max -- -- -- +10 -10 1 1.4 225 290 -- -- -- -- -- -- -- -- -- -- -- -- Unit V V V A A A V m m S pF pF pF ns ns ns ns nC nC nC V Test conditions ID = 10 mA, VGS = 0 IG = +100 A, VDS = 0 IG = -100 A, VDS = 0 VGS = +10 V, VDS = 0 VGS = -10 V, VDS = 0 VDS = 60 V, VGS = 0 VDS = 10 V, ID = 1 mA ID = 1 A, VGS = 4.5 V Note4 ID = 1 A, VGS = 2.5 V Note4 ID = 1 A, VDS = 10 V Note4 VDS = 10 V VGS = 0 f = 1 MHz ID = 1 A VGS = 10 V RL = 10 Rg = 4.7 VDD = 10 V VGS = 4.5 V ID = 2 A IF = 2 A, VGS = 0 Note4
REJ03G1492-0200 Rev.2.00 Apr 16, 2007 Page 2 of 7
RQM2201DNS
Main Characteristics
Maximum Channel Power Dissipation Curve
2 10
0 10 s
Maximum Safe Operation Area
10 s
Channel Dissipation Pch (W)
1.8
Drain Current ID (A)
1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150 175 200
1 Dr
2 Dr ive O pe ra
s m s 1 m 10
1
DC Op
er ion at
ive
0.1
Op
er
Operation in this area is limited by RDS(on)
Ta = 25C 1 Shot Pulse
tio n
at
ion
0.01 0.01
0.1
1
10
100
Ambient Temperature Ta (C)
*When using the glass epoxy board (FR-4: 40 x 40 x 1 mm)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
3.8 V 3.6 V
Typical Transfer Characteristics (1)
4
3.2 V 3.0 V
10
3.4 V
4V 2.8 V 2.6 V
3.5
VDS = 10 V Pulse Test
Drain Current ID (A)
Drain Current ID (A)
8 10 V
3 2.5 2 1.5 1 0.5 0 0 0.5 1 Tc = 75C 25C -25C 1.5 2 2.5
6
Pulse Test Tc = 25C
2.4 V 2.2 V
4
2.0 V 1.8 V
2
1.6 V VGS = 1.4 V
0
0
2
4
6
8
10
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Gate to Source Cutoff Voltage vs.
Gate to Source Cutoff Voltage VGS(off) (V)
Typical Transfer Characteristics (2)
1 VDS = 10 V Pulse Test
Case Temperature
1.2 1 0.8 0.6 0.4 0.2 VDS = 10 V Pulse Test 0 25 50 75 100 125 150 1 mA 0.1 mA ID = 10 mA
Drain Current ID (A)
0.1 0.01 Tc = 75C 0.001 25C 0.0001 -25C
0.00001 0 0.5 1 1.5 2
0 -25
Gate to Source Voltage VGS (V)
Case Temperature Tc (C)
REJ03G1492-0200 Rev.2.00 Apr 16, 2007 Page 3 of 7
RQM2201DNS
VDS(on) (V)
Drain to Source Saturation Voltage vs. Gate to Source Voltage
0.6 0.5 0.4 2A 0.3 0.2 0.1 0 0 1.5 A 1A 0.5 A
Static Drain to Source on State Resistance vs. Drain Current
Drain to Source on State Resistance RDS(on) ()
Pulse Test Tc = 25C
1
Pulse Test Tc = 25C VGS = 2.5 V
Drain to Source Saturation Voltage
0.1
10 V
4.5 V
2
4
6
8
10
0.01 0.1
1
10
Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Case Temperature
500 450 400 350 300 250 200 150 100 50 0 -25 0 25 50 75 0.5 A Pulse Test VGS = 4.5 V 100 125 150 1A 1.5 A ID = 2 A
Drain Current ID (A) Static Drain to Source on State Resistance vs. Case Temperature
Drain to Source on State Resistance RDS(on) (m)
Drain to Source on State Resistance RDS(on) (m)
500 450 400 350 300 250 200 150 100 50 0 -25
Pulse Test VGS = 2.5 V
ID = 2 A 1.5 A
1A 0.5 A
0
25
50
75
100 125 150
Case Temperature Tc (C)
Case Temperature Tc (C)
Forward Transfer Admittance |yfs| (S)
IDSS (nA)
Forward Transfer Admittance vs. Drain Current
10 Pulse Test VDS = 10 V -25C
Zero Gate Voltage Drain current vs. Case Temperature
10000 Pulse Test VGS = 0 V VDS = 60 V
Zero Gate Voltage Drain current
1000
25C 1 Tc = 75C
100
10
0.1 0.1
1
10
1 -25
0
25
50
75
100 125 150
Drain Current ID (A)
Case Temperature Tc (C)
REJ03G1492-0200 Rev.2.00 Apr 16, 2007 Page 4 of 7
RQM2201DNS
Dynamic Input Characteristics
Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V)
80 ID = 2.0 A 16 1000 VGS = 4.5 V, VDD = 10 V Rg = 4.7 , duty 1 %
Switching Characteristics
60 VDD = 10 V 25 V 50 V
12
Switching Time t (ns)
100
tf td(off)
40
8
10
td(on)
20
VDD = 50 V 25 V 10 V 1 2 3 4 5
4
tr 1 0.01 0.1 1 10
0
0
Gate Charge Qg (nc)
Drain Current ID (A)
Typical Capacitance vs. Drain to Source Voltage
1000 450 Ciss1 100 Coss 10
VGS = 0 V f = 1 MHz
Input Capacitance vs. Gate to Source Voltage
Ciss, Coss, Crss (pF)
400
Ciss2 (pF)
350
300
Crss
250
VDS = 0 V f = 1 MHz
1 0 10 20 30 40 50 60
200 -10 -8 -6 -4 -2 0
2
4
6
8 10
Drain to Source Voltage VDS (V) Reverse Drain Current vs. Source to Drain Voltage
10
Gate to Source Voltage VGS (V) Body-Drain Diode Forward Voltage vs. Case Temperature
0.7 VGS = 0 0.6 0.5 0.4 0.3 0.2 0.1 0 -25 1 mA
8 6 4.5 V 4 2.5 V VGS = 0 V 2 Pulse Test 0 0.4 0.8 1.2 1.6 2.0
Body-Drain Diode Forward Voltage VSDF (V)
Reverse Drain Current IDR (A)
ID = 10 mA
0
25
50
75
100 125 150
Source to Drain Voltage VSD (V)
Case Temperature Tc (C)
REJ03G1492-0200 Rev.2.00 Apr 16, 2007 Page 5 of 7
RQM2201DNS
Switching Time Test Circuit Switching Time Waveform
Vin Monitor Rg D.U.T. RL
Vout Monitor Vin Vout 10% 10%
90%
10%
Vin 10 V
VDD = 10 V
90% td(on) tr
90% td(off) tf
REJ03G1492-0200 Rev.2.00 Apr 16, 2007 Page 6 of 7
RQM2201DNS
Package Dimensions
Package Name HWSON-6 JEITA Package Code P-HWSON6-3x3-0.80 RENESAS Code PWSN0006ZA-A Previous Code MASS[Typ.] 0.022 g
e1 D A b2 e1 /2
Lp2 E
Lp1 e B
Reference Symbol
e
/2
b1
Dimension in Millimeters
A2 c yS b A1
A
Seating plane
S
A A1 A2 b b1 b2 c D E e e1 Lp1 Lp2 y
Min 0.70 0 0.70 0.35 1.10 2.90 2.90
Nom
Max 0.80 0.05 0.75 0.45 1.20 3.10 3.10
0.20 0.40 1.15 0.20 3.00 3.00 0.80 1.60
0.55 1.75
0.75 1.95 0.05
Ordering Information
Part No. RQM2201DNSTL-E RQM2201DNSTR-E Quantity 2000 pcs. 2000 pcs. Shipping Container 178 mm reel, 8 mm Emboss taping 178 mm reel, 8 mm Emboss taping
REJ03G1492-0200 Rev.2.00 Apr 16, 2007 Page 7 of 7
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